DocumentCode :
565168
Title :
mLogic: Ultra-low voltage non-volatile logic circuits using STT-MTJ devices
Author :
Morris, D. ; Bromberg, D. ; Jian-Gang Zhu ; Pileggi, Larry
Author_Institution :
Dept. of ECE, Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear :
2012
fDate :
3-7 June 2012
Firstpage :
486
Lastpage :
491
Abstract :
This paper introduces the design of logic circuits based exclusively on novel magnetoelectronic devices. Current signals are steered by 2× resistance change switching while operating with sub-100 mV voltage pulses for power and synchronization. The inherent memory of the devices results in fully pipelined nonvolatile logic. We demonstrate that co-optimization of the devices, circuits and logic can achieve ultra-low energy-per-operation for design examples.
Keywords :
MRAM devices; integrated circuit design; logic design; magnetic tunnelling; MRAM; STT-MTJ devices; device cooptimization; logic circuit design; mLogic; magnetic tunnel junctions; magnetoelectronic devices; ultra low voltage nonvolatile logic circuits; ultra-low energy-per-operation; voltage 100 mV; voltage pulses; CMOS integrated circuits; Clocks; Logic gates; Magnetic tunneling; Magnetoelectronics; Resistance; Switches; Emerging Circuits and Devices; MRAM; Magnetic Logic; Spin-Transfer Torque; Spintronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (DAC), 2012 49th ACM/EDAC/IEEE
Conference_Location :
San Francisco, CA
ISSN :
0738-100X
Print_ISBN :
978-1-4503-1199-1
Type :
conf
Filename :
6241550
Link To Document :
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