Hot Carrier Injection Effects in the Ultrashallow Body SONOS Gate Power MOSFET

Author

Xianda Zhou ; Hao Feng ; Sin, Johnny K. O.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

60

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

2008

Lastpage

2014

Abstract

In this paper, threshold voltage (V_TH) stability of the ultrashallow body silicon-oxide-nitride-oxide-silicon gate power MOSFET (SG-MOSFET) under hot carrier injection conditions is characterized and discussed. Experimental results indicate that hot electron injection will increase the V_TH from 1 to 2 V in the lifetime of the device. On the other hand, hot hole injection has no significant influence on the V_TH stability of the device. The different effects caused by hot electron injection and hot hole injection are explained by using numerical analysis and experimental characterization, and results suggest that the V_TH stability of the ultrashallow body SG-MOSFET will be improved if the short channel effect of the structure can be suppressed.

Keywords

elemental semiconductors; hot carriers; numerical analysis; power MOSFET; silicon; silicon compounds; stability; SiO₂-Si₃N₄-SiO₂-Si; device lifetime; device stability; hot carrier injection effects; hot electron injection; hot hole injection; numerical analysis; short channel effect; threshold voltage stability; ultrashallow body SG-MOSFET; ultrashallow body SONOS gate power MOSFET; ultrashallow body silicon-oxide-nitride-oxide-silicon gate power MOSFET; voltage 1 V to 2 V; Hot carrier injection (HCI); power MOSFET; short channel effect; silicon-oxide-nitride-oxide-silicon (SONOS); threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2259176

Filename

6515194