DocumentCode :
5659
Title :
Optical and Thermal Analyses of Thin-Film Hexagonal Micro-Mesh Light-Emitting Diodes
Author :
Kwai Hei Li ; Yuk Fai Cheung ; Qian Zhang ; Hoi Wai Choi
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Volume :
25
Issue :
4
fYear :
2013
fDate :
Feb.15, 2013
Firstpage :
374
Lastpage :
377
Abstract :
Vertical thin-film light-emitting diodes (LEDs) with integrated micro-mesh arrays are reported. By removing the sapphire substrate through laser lift-off, vertical current conduction becomes possible, improving current spreading capability and thus electrical properties. Compared with the as-grown device, the thin-film micro-mesh LEDs emits 61% more optical power, attributed to enhanced light extraction through the micro-mesh, evidence of which is provided by confocal imaging. At 100 mA, the enhancement factor rises to >;100% attributed to low junction temperatures due to efficient heat conduction as verified by infrared thermometric imaging.
Keywords :
electrical conductivity; infrared imaging; integrated optoelectronics; light emitting diodes; micro-optics; optical arrays; thermal conductivity; thin film devices; Al2O3; confocal imaging; current 100 mA; current spreading capability; electrical properties; heat conduction; infrared thermometric imaging; integrated micromesh arrays; junction temperature; laser lift-off; light extraction; optical analysis; optical power; sapphire substrate; thermal analysis; thin-film hexagonal micromesh light-emitting diodes; thin-film micromesh LED; vertical current conduction; vertical thin-film light-emitting diodes; Gallium nitride; Heating; Indium tin oxide; Junctions; Light emitting diodes; Substrates; Surface treatment; Light-emitting diodes (LEDs); light extraction; thin film;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2238621
Filename :
6409387
Link To Document :
بازگشت