DocumentCode :
56591
Title :
Simultaneous fabrication of a through-glass interconnect via and a bump using dry film resist and submicron gold particles
Author :
Mimatsu, Hayata ; Mizuno, Jun ; Shoji, Shuji ; Kasahara, T. ; Shih, Kailing ; Nomura, Keigo ; Kanehira, Yukio ; Ogashiwa, Toshinori
Author_Institution :
Dept. of Nanosci. & Nanoengineering, Waseda Univ., Tokyo, Japan
Volume :
9
Issue :
8
fYear :
2014
fDate :
Aug. 2014
Firstpage :
532
Lastpage :
535
Abstract :
A process for the simultaneous fabrication of through-glass interconnect vias (TGVs) and gold (Au) bumps using dry film resist and submicron Au particles is proposed. A Ti/Pt/Au layer was sputtered on the top and bottom surfaces of glass vias to improve the adhesion between the glass substrate and submicron Au particles. The submicron Au particles filled the resist holes and glass vias fabricated by photolithography and by the two-electrode method, respectively, and were then sintered. The height and diameter of the fabricated Au bumps were about 20-25 and 200 μm, respectively. The Ti/Pt/Au layer on the surface of the glass substrate was removed by Ar ion milling to isolate each bump electrically. The resistance of a single Au bump and TGV was evaluated using the four-wire ohm method to be about 0.05 Ω. Furthermore, Au bump bonding was demonstrated. Fractured Au bumps and TGVs were observed by scanning electron microscopy after the bonded sample was peeled. It is expected that this fabrication process using a dry film resist and submicron Au particles will be useful in simple packaging processes to form glass interposer substrates or glass integrated circuit chips.
Keywords :
adhesion; electrical resistivity; gold; integrated circuit interconnections; integrated circuit packaging; photolithography; photoresists; platinum; scanning electron microscopy; sputter deposition; thin films; titanium; TGV; Ti-Pt-Au-SiO2; adhesion; bump bonding; dry film resist; four-wire ohm method; fractured bumps; glass integrated circuit chips; glass substrate; packaging processes; photolithography; scanning electron microscopy; sintering; sputter deposition; submicron gold particles; through-glass interconnect vias; two-electrode method;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2014.0187
Filename :
6891915
Link To Document :
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