Title :
Characterization of local strain around trough silicon via interconnects in wafer-on-wafer structures
Author :
Nakatsuka, Osamu ; Kitada, Hideki ; Kim, Young Suk ; Mizushima, Yoriko ; Nakamura, Tomoji ; Ohba, Takayuki ; Zaima, Shigeaki
Author_Institution :
Nagoya Univ., Nagoya, Japan
fDate :
Jan. 31 2012-Feb. 2 2012
Abstract :
We have investigated the local strain structures of thin Si layer including through Si via (TSV) interconnects prepared with wafer-on-wafer technology. Microdiffraction measurement reveals the misorientation of the thin Si layer on a Si substrate. Microdiffraction also realizes that the separation of strain component in the thin Si layer. We found the anisotropic structure of local strain in the thin Si layer between TSV interconnects.
Keywords :
X-ray diffraction; elemental semiconductors; integrated circuit interconnections; silicon; three-dimensional integrated circuits; wafer-scale integration; Si; TSV interconnects; XRD; anisotropic structure; local strain structures; microdiffraction measurement; misorientation; strain component; thin Si layer; through silicon via interconnects; wafer-on-wafer structures; Diffraction; Silicon; Strain; Substrates; Through-silicon vias; X-ray diffraction; X-ray scattering;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
DOI :
10.1109/3DIC.2012.6262971
