Damage evaluation of wet-chemical silicon-wafer thinning process

We evaluate the surface damage caused by the wet-chemical wafer-thinning process by measuring the die fracture stress. The die fracture stress afforded by this process is higher than those afforded by other methods including backgranding. In addition, we investigate the impact of residual stress, generated by the wet-chemical wafer-thinning process, on MOSFET operations. It is found that the change in MOSFET characteristics is very small, even when the wafer is thinned down to 50 μm.