Title :
Mechanical reliability of Cu/low-k interconnects and underfill
Author :
Yoon, Taeshik ; Lee, Inhwa ; Kim, Taek-Soo
Author_Institution :
Dept. of Mech. Eng., KAIST, Daejeon, South Korea
fDate :
Jan. 31 2012-Feb. 2 2012
Abstract :
Delamination/cracking of low-k dielectrics for Cu interconnects and underfill epoxy have significantly limited the reliability of 3D packaging. We present diagnosing adhesion and cohesion with fracture mechanics testing. Post deposition UV cure depth profiles of low-k thin films were successfully tailored to have maximum interfacial fracture energy. Environmentally-assisted crack growth rate and diffusion in low-k thin films were shown sensitive to process solution chemistry. Graded hybrid adhesion layers between a Si chip and underfill were shown to prevent the interfacial failure of underfill and result in the dramatic increase of fracture energy.
Keywords :
adhesion; copper; cracks; delamination; elemental semiconductors; fracture mechanics; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; low-k dielectric thin films; mechanical testing; silicon; 3D packaging reliability; Cu; Si; adhesion diagnosis; cohesion diagnosis; copper-low-k interconnects; diffusion; environmentally-assisted crack growth rate; graded hybrid adhesion layers; interfacial failure; interfacial fracture energy; low-k dielectric delamination-cracking; low-k thin films; mechanical reliability; post-deposition UV cure depth profiles; process solution chemistry; silicon chip; underfill epoxy;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
DOI :
10.1109/3DIC.2012.6263001
