Title :
Through Silicon Capacitive Coupling (TSCC) interface for 3D stacked dies
Author :
Ikeuchi, Katsuyuki ; Takamiya, Makoto ; Sakurai, Takayasu
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
fDate :
Jan. 31 2012-Feb. 2 2012
Abstract :
A Through Silicon Capacitive Coupling (TSCC) interface enabling face-to-back capacitive coupling data transfer for 3D stacked dies is proposed. TSCC has three features, (1) it allows stacking more than three chips, (2) it enables easy access to the bonding pads for DC power supplies, and (3) it enables the capacitive coupling pads to be used as bonding pads. TSCC channel models are assumed and design guidelines are given for transceiver design. A transceiver designed and fabricated in 0.18μm CMOS successfully communicates through a 400μm silicon substrate at 200Mbps. It is also shown that thinning the chip will reduce the area overhead of the TSCC pad.
Keywords :
CMOS integrated circuits; bonding processes; elemental semiconductors; integrated circuit design; power supply circuits; silicon; stacking; three-dimensional integrated circuits; transceivers; 3D stacked die; CMOS technology; DC power supply; Si; TSCC channel model interface; bit rate 200 Mbit/s; bonding pad; capacitive coupling data transfer; capacitive coupling pad; chip thinning; size 0.18 mum; size 400 mum; through silicon capacitive coupling channel model interface; transceiver design; Bonding; Couplings; Inverters; Logic gates; Receivers; Silicon; Transmitters;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2011 IEEE International
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-2189-1
DOI :
10.1109/3DIC.2012.6263045
