DocumentCode
566712
Title
Comparison PM noise of BJT and MOSFET oscillators
Author
Boldyreva, Tatiana I. ; Drozdova, Elena M.
Author_Institution
Dept. of IRE, Nat. Res. Univ. MPEI, Moscow, Russia
fYear
2012
fDate
19-21 June 2012
Firstpage
263
Lastpage
266
Abstract
This article presents a technique for designing low-noise BJT and MOSFET Clapp oscillators. Opportunities to use noise compressing feedback resistors inserted in emitter (source) circuit were investigated. For BJT and MOSFET oscillators, those were calculated using algorithm of parametric synthesis, minimal values of PM noise power spectral densities were found and compared. Some limitations of this approach to the problem of PM noise reduction in BJT and MOSFET oscillators were found and discussed.
Keywords
MOSFET; bipolar transistors; feedback oscillators; parametric oscillators; resistors; semiconductor device noise; BJT clapp oscillator; MOSFET clapp oscillator; PM noise reduction; emitter circuit; noise compressing feedback resistor; parametric synthesis; power spectral density; Integrated circuits; Logic gates; MOSFET circuits; Niobium; Oscillators; Resistance; Silicon; algorithm of parametric synthesis; noise reduction; oscillators; phase noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Embedded Computing (MECO), 2012 Mediterranean Conference on
Conference_Location
Bar
Print_ISBN
978-1-4673-2366-6
Type
conf
Filename
6268974
Link To Document