Analysis of power losses in voltage source converter with new generation IGBTs

Author

Wu, Rui ; Wen, JiaLiang ; Wu, Jing ; Chen, Zhongyuan ; Peng, Chang ; Wang, Yu

Author_Institution

China Electr. Power Res. Inst. (CEPRI), Beijing, China

Volume

1

fYear

2012

fDate

25-27 May 2012

Firstpage

674

Lastpage

678

Abstract

This paper introduced the structure of new generation IGBTs(Insulated Gate Bipolar Transistor), such as Trench-Gate + Field Stop(FS) IGBT of Infineon, and Soft-Punch-Through(SPT) and Soft-Punch-Through-Plus(SPT+) IGBT of ABB. It also compared the characteristics. Then this paper calculated and discussed the power losses of voltage source converter(VSC) with these new generation IGBTs. The results showed that using new generation IGBTs can lead to relatively low power losses.

Keywords

insulated gate bipolar transistors; power convertors; ABB; Infineon; field stop IGBT; insulated gate bipolar transistor; new generation IGBT; power losses; soft-punch-through-plus IGBT; trench-gate IGBT; voltage source converter; Insulated gate bipolar transistors; Modulation; Power conversion; Switches; Switching frequency; Switching loss; Field Stop(FS); Insulated Gate Bipolar Transistors(IGBT); Soft-Punch-Through plus(SPT+); power loss; voltage source converter(VSC);

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Science and Automation Engineering (CSAE), 2012 IEEE International Conference on

Conference_Location

Zhangjiajie

Print_ISBN

978-1-4673-0088-9

Type

conf

DOI

10.1109/CSAE.2012.6272683

Filename

6272683