DocumentCode :
567126
Title :
Gas-sens characteristics research of Al/CuPc/Cu Schottky diode
Author :
Pang, Chao ; Wang, Dongxing ; Wang, Xiao Lin ; Wang, Changhao ; Yin, Jinghua ; Zhao, Hong
Author_Institution :
Dept. of Electron. Sci. & Technol., Harbin Univ. of Sci. & Technol., Harbin, China
Volume :
1
fYear :
2012
fDate :
18-20 May 2012
Firstpage :
428
Lastpage :
431
Abstract :
In this paper, evidence is provided that an organic Al/CuPc/Cu shottky diode can be used as a novel gas sensor. This device is simple manufacturing process, lower costs, and shows good Schottky characteristics. Its structure includes three layers that are Al/CuPc/Cu. The sensitive feature of the device is characterized, through researching the change of electric properties in NO2 gas. The results of the study indicate that the current of device increased obviously along with the 10ppm NO2 gas is accessed to. The potential barrier height in air and NO2 gas is calculated and compared. The results the potential barrier height of CuPc/Al reduced by 60meV.
Keywords :
CuPc; Potential barrier height; sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Measurement, Information and Control (MIC), 2012 International Conference on
Conference_Location :
Harbin, China
Print_ISBN :
978-1-4577-1601-0
Type :
conf
DOI :
10.1109/MIC.2012.6273334
Filename :
6273334
Link To Document :
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