Title :
A comparison of processes and challenges between organic, a-Si:H, and oxide TFTs for active matrix backplanes on plastic
Author :
De la Fuente Vornbrock, Alejandro ; Almanza-Workman, Marcia ; Dickin, Fraser ; Elder, Richard E. ; Garcia, Robert A. ; Holland, Edward ; Jackson, Warren ; Jam, Mehrban ; Jeans, Albert ; Kim, Han-Jun ; Luo, Hao ; Kwon, Ohseung ; Maltabes, John ; Mei, Ping
Author_Institution :
Hewlett Packard Labs., Palo Alto, CA, USA
Abstract :
Processes to produce active-matrix backplanes on plastic substrates have been developed utilizing a-Si:H, multi-component oxide, and organic semiconductor technologies. The suitability of these technologies for future flat panel display applications is discussed. Of these material systems multi-component oxides exhibit highest field-effect mobilities (10cm2/Vs for zinc tin oxide demonstrated), followed by small molecule organic semiconductors (0.95 cm2/Vs), and a-Si:H (0.5 cm2/Vs). Yet despite higher mobilities, organic TFTs drive less current than a-Si:H because of the low device capacitances required to fabricate such devices. Backplanes made with a-Si:H appear to be the least risky technology, followed by multi-component oxide, and organic semiconductor technologies.
Keywords :
amorphous semiconductors; capacitance; elemental semiconductors; hydrogen; organic semiconductors; semiconductor thin films; silicon; thin film transistors; tin compounds; zinc compounds; Si:H; ZnSnO; a-Si:H TFT; a-Si:H semiconductor technology; active matrix backplanes; device capacitances; field-effect mobilities; flat panel display applications; material systems; multicomponent oxide semiconductor technology; organic TFT; organic semiconductor technology; oxide TFT; plastic substrates; small molecule organic semiconductors; Dielectrics; Logic gates; Metals; Organic semiconductors; Plastics; Substrates;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
