• DocumentCode
    567961
  • Title

    Characteristics of ZnO/Al/ZnO multilayers on glass with different ZnO film thicknesses prepared by cathodic vacuum arc deposition

  • Author

    Huang, Chien-Wei ; Pan, Cheng-Tang ; Yang, Ru-Yuan

  • Author_Institution
    Dept. of Mech. & Electron-Mech. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    2012
  • fDate
    4-6 July 2012
  • Firstpage
    91
  • Lastpage
    94
  • Abstract
    In this paper, the characteristics of the transparent ZnO/Al(10 nm)/ZnO multilayered films on glass substrate with different ZnO film thickness (50, 100, 150 and 200 nm) were investigated. The ZnO films were deposited using cathodic arc plasma technique at a low temperature (<;75°C). Microstructure, optical and electrical properties were investigated and discussed. The multilayered films showed a high orientation of (002) peak. An average transmittance around 70 % in the visible region and the lowest resistivity around 4.02×10-4 Ω-cm could be achieved for the ZnO(50 nm)/Al(10 nm)/ZnO (50 nm) multilayered film.
  • Keywords
    II-VI semiconductors; aluminium; electrical resistivity; multilayers; plasma deposition; semiconductor-metal boundaries; transparency; vacuum deposition; visible spectra; wide band gap semiconductors; zinc compounds; (002) peak orientation; SiO2; ZnO film thicknesses; ZnO-Al-ZnO; ZnO-Al-ZnO multilayers; average transmittance; cathodic arc plasma technique; cathodic vacuum arc deposition; electrical properties; glass substrate; microstructure; optical properties; resistivity; size 10 nm; size 50 nm to 200 nm; transparency; visible region; Conductivity; Glass; Nonhomogeneous media; Optical films; Substrates; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-0399-6
  • Type

    conf

  • Filename
    6294849