Excimer laser annealed low temperature solution-processed Oxide Thin Film Transistors

We have employed XeCl Excimer Laser Annealing (ELA) treatment on ZTO active layer in low temperature solution-processed Zinc Tin Oxide (ZTO) Thin Film Transistors (TFTs) with 300 °C of annealing temperature. The threshold voltage decreased from 18.38 V to 4.78 V because of the increase of carrier concentration by reduction of Cl bonding by employing ELA treatment. The saturation mobility was also gradually improved from 0.04 cm²/Vsec to 0.58 cm²/Vsec because of the reduction of halide residues as trap states by employing ELA treatment. We have observed that the electrical characteristics of 300 °C low temperature solution-processed ZTO TFTs could be improved by employing ELA treatment so that it is suitable for flexible display backplane such as glass or plastic substrate.