Title :
Organic field-effect transistors based on 3,7-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene oligomer
Author :
Zongfan Duan ; Yanagi, Yuichiro ; Ohuchi, Hidetoshi ; Takayanagi, Y. ; Gaoyang Zhao ; Nishioka, Y.
Author_Institution :
Coll. of Sci. & Technol., Nihon Univ., Funabashi, Japan
Abstract :
The structures and the morphologies of the vacuum-thermal deposited films based on a new phenylene-thiophene oligomer, 3,7-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene (37HPTDBT), have been characterized. The organic field-effect transistors (OFETs) with thin 37HPTDBT films exhibited high mobilities ranging from 0.06-0.3 cm2/Vs.
Keywords :
electron mobility; organic field effect transistors; organic semiconductors; vacuum deposited coatings; 3,7-bis[5-(4-n-hexylphenyl)-2-thienyl]dibenzothiophene oligomer; 37HPTDBT; morphologies; organic field effect transistors; phenylene-thiophene oligomer; structures; vacuum-thermal deposited films; Annealing; Films; OFETs; Performance evaluation; Silicon; Substrates; X-ray scattering;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
