Title :
Control of crystal growth orientation by micro-thermal-plasma-jet induced melting and solidification of silicon films on porous silicon underlayer
Author :
Hayashi, Shohei ; Matsubara, Ryohei ; Fujita, Yuji ; Ikeda, Mitsuhisa ; Sakaike, Kohei ; Higashi, Seiichiro
Author_Institution :
Dept. of Semicond. Electron. & Integration Sci., Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
Amorphous silicon (a-Si) films on porous silicon (PS) underlay er were melted and rapid solidification was induced by micro-thermal-plasma-jet (μ-TPJ) irradiation. Because the thermal conduction can be controlled by changing the porosity and the thickness of PS layer, a-Si films were easily melted by millisecond annealing. Crystallized Si films show a high crystalline volume fraction of ~ 100 % and lower tensile stress compared to that of Si films crystallized on quartz substrates. In addition, crystallized Si films on PS layer show strong orientation to {100} direction, which suggests liquid phase epitaxial growth from PS layer.
Keywords :
amorphous semiconductors; annealing; elemental semiconductors; liquid phase epitaxial growth; melting; plasma jets; porosity; porous semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; solidification; tensile strength; thermal conductivity; Si; amorphous silicon films; crystal growth orientation; crystallized films; microthermal-plasma-jet-induced melting; microthermal-plasma-jet-induced solidification; porosity; porous silicon underlayer; quartz substrates; tensile stress; thermal conduction; {100} direction; Crystallization; Films; Radiation effects; Raman scattering; Silicon; Substrates; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
