Cu nanoparticle induced crystallization of amorphous Ge film using ferritin

Author

Uenuma, Mutsunori ; Zheng, Bin ; Bundo, Kosuke ; Horita, Masahiro ; Ishikawa, Yasuaki ; Yamashita, Ichiro ; Uraoka, Yukiharu

Author_Institution

Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

227

Lastpage

230

Abstract

The metal-induced lateral crystallization (MILC) of an amorphous Ge (a-Ge) thin film using Cu nanoparticles (NPs) was investigated. Cu-NPs were formed by a cage-shaped protein. After complete elimination of protein shell, crystal growth was performed at 300°C. Raman spectra and TEM studies revealed that a poly-Ge film was formed at low temperature. The crystallization temperature depends on the metal-NP because of the different activation energy for crystallizing the a-Ge into the poly-Ge. As the result, the Cu-NP MILC method is more efficient for the low temperature crystallization and the low metal contamination.

Keywords

Raman spectra; crystallisation; elemental semiconductors; germanium; semiconductor growth; semiconductor thin films; transmission electron microscopy; Cu nanoparticle induced crystallization; Cu nanoparticle metal-induced lateral crystallization method; Ge; Raman spectra; TEM; activation energy; amorphous Ge thin film; cage-shaped protein; crystal growth; crystallization temperature; ferritin; low metal contamination; low temperature crystallization; metal-nanoparticle; poly-Ge film; protein shell elimination; temperature 300 degC; Annealing; Crystallization; Films; Metals; Proteins; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294890