DocumentCode :
568001
Title :
Cu nanoparticle induced crystallization of amorphous Ge film using ferritin
Author :
Uenuma, Mutsunori ; Zheng, Bin ; Bundo, Kosuke ; Horita, Masahiro ; Ishikawa, Yasuaki ; Yamashita, Ichiro ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
fYear :
2012
fDate :
4-6 July 2012
Firstpage :
227
Lastpage :
230
Abstract :
The metal-induced lateral crystallization (MILC) of an amorphous Ge (a-Ge) thin film using Cu nanoparticles (NPs) was investigated. Cu-NPs were formed by a cage-shaped protein. After complete elimination of protein shell, crystal growth was performed at 300°C. Raman spectra and TEM studies revealed that a poly-Ge film was formed at low temperature. The crystallization temperature depends on the metal-NP because of the different activation energy for crystallizing the a-Ge into the poly-Ge. As the result, the Cu-NP MILC method is more efficient for the low temperature crystallization and the low metal contamination.
Keywords :
Raman spectra; crystallisation; elemental semiconductors; germanium; semiconductor growth; semiconductor thin films; transmission electron microscopy; Cu nanoparticle induced crystallization; Cu nanoparticle metal-induced lateral crystallization method; Ge; Raman spectra; TEM; activation energy; amorphous Ge thin film; cage-shaped protein; crystal growth; crystallization temperature; ferritin; low metal contamination; low temperature crystallization; metal-nanoparticle; poly-Ge film; protein shell elimination; temperature 300 degC; Annealing; Crystallization; Films; Metals; Proteins; Scanning electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
Type :
conf
Filename :
6294890
Link To Document :
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