(111)-Oriented large-grain Ge on insulator by gold-induced crystallization combined with interfacial layer insertion

Author

Park, Jong-Hyeok ; Suzuki, Tsuneharu ; Kurosawa, Masashi ; Miyao, Masanobu ; Sadoh, Taizoh

Author_Institution

Dept. of Electron., Kyushu Univ., Fukuoka, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

231

Lastpage

234

Abstract

Low-temperature (≤ 350°C) formation of orientation-controlled large-grain Ge on insulating substrates is essential to achieve advanced flexible devices employing plastic substrates. To achieve this, effects of interfacial-oxide layer insertion on gold-induced crystallization (GIC) of amorphous Ge films on insulating substrates have been investigated. Consequently, (111)-oriented large-grain (20-50 μm) Ge crystals are obtained at 350°C by inserting interfacial oxide layers. It is speculated that this phenomena is attributed to suppression of random bulk nucleation of Ge in Au films.

Keywords

MIM structures; amorphous semiconductors; crystallisation; germanium; gold; interface structure; nucleation; substrates; (111)-oriented large-grain Ge on insulator; Al₂O₃; Ge in Au films; Ge-Au; advanced flexible devices; amorphous Ge films; gold-induced crystallization; interfacial layer insertion; interfacial oxide layer insertion; interfacial-oxide layer insertion effects; large-grain Ge on insulating substrates; low-temperature formation; plastic substrates; random bulk nucleation suppression; size 20 mum to 50 mum; temperature 350 degC; Aluminum oxide; Annealing; Crystallization; Films; Gold; Plasma temperature; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294891