Title :
Structural and electrical properties of Al2O3 film grown by mist chemical vapour deposition
Author :
Kawaharamura, Toshiyuki ; Dapeng, Wang ; Toda, Tetsuya ; Li, Chaoyang ; Furuta, Mamoru
Author_Institution :
Inst. for Nanotechnol., Kochi Univ. of Technol., Kami, Japan
Abstract :
Aluminium oxide (AlOx) thin film was grown using aluminium acetylacetonate (AlAcac3) as a source solute by mist chemical vapour deposition (CVD). The AlOx thin film grown at 430°C exhibited the breakdown field (EBD) and the dielectric constant (k) of 5.9 MV/cm and 6.8, respectively. It was suggested that the formation of boehmite (γ-AlO(OH)) in the films decreased the EBD of AlOx thin films at the growth temperatures below 350°C. In the mist CVD, the reaction proceeded efficiently (Ea = 23.5-26 kJ/mol) under the evaporated solvent atmosphere. The AlOx film was able to be grown at 430°C with high deposition ratio (18 nm/min) and smooth surface (RMS =1.6 nm).
Keywords :
aluminium compounds; chemical vapour deposition; electric breakdown; permittivity; thin films; Al2O3; aluminium acetylacetonate; boehmite; breakdown field; deposition ratio; dielectric constant; electrical properties; evaporated solvent atmosphere; growth temperature; mist CVD; mist chemical vapour deposition; smooth surface; structural properties; temperature 350 degC; temperature 430 degC; thin films; Aluminum oxide; Atmosphere; Chemical vapor deposition; Electric breakdown; Films; Substrates; Temperature measurement;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
