DocumentCode :
568007
Title :
Minority carrier lifetime measurements by multiple wavelength light induced carrier microwave absorption method
Author :
Sameshima, T. ; Takiguchi, Y. ; Nagao, T. ; Hasumi, M.
Author_Institution :
Tokyo Univ. of Agric. & Technol., Koganei, Japan
fYear :
2012
fDate :
4-6 July 2012
Firstpage :
253
Lastpage :
256
Abstract :
We report the minority carrier effective lifetime τeff of crystalline silicon substrate via microwave absorption caused by free carriers induced by multiple wavelength light illumination at 635 and 980 nm. τeff was low of about 2.5×10-6 s in the case of 635 nm light illumination for n-type 520 μm thick bare silicon substrate, while it was high ranged from 8.2 × 10-6 to 1.8 × 10-5 s in the case of 980 nm light illumination because carrier recombination defect sites concentrated at the surface region and a diffusion time about 10-5 s was necessary for minority carriers generated by 980 nm light to reach the surface because of the light penetration depth of 125 μm. This method determined that Ar plasma induced carrier recombination defect sites located at the silicon surface.
Keywords :
carrier lifetime; elemental semiconductors; infrared spectra; microwave spectra; minority carriers; silicon; surface diffusion; visible spectra; Si; crystalline silicon substrate; diffusion time; free carriers; light illumination; light penetration depth; minority carrier lifetime measurement; multiple wavelength light induced carrier microwave absorption method; plasma induced carrier recombination defect sites; size 520 mum; surface region; wavelength 635 nm; wavelength 980 nm; Argon; Lighting; Optical surface waves; Plasmas; Silicon; Substrates; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
Type :
conf
Filename :
6294897
Link To Document :
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