Title :
RIE texturing for mc-Si solar cell in SF6/O2/Cl2 gas mixtures
Author :
Park, Kwang Mook ; Lee, Myoung Bok ; Choi, Sie Young
Author_Institution :
Grad. Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
Maskless, random RIE texturing with SF6/O2/Cl2 gas mixtures was investigated to achieve higher efficiency for mc-Si solar cells. Triangular pyramid structure with aspect ratio of ~1 was formed and, when RIE power increased, average weighted reflectance reduced as about 1.46% per 10 W. It was due to the increased density of surface features. The performances of all RIE-textured mc-S i solar cells were improved more than that of standard untextured cell (reference). Among them, cell for 110 W, which was higher than reference by 0.6%, represented the highest efficiency of 16.82%. Density of surface features was an important factor to upgrade the characteristic performances of mc-Si solar cells.
Keywords :
elemental semiconductors; gas mixtures; silicon; solar cells; sputter etching; surface texture; Si; aspect ratio; average weighted reflectance; gas mixtures; maskless random RIE texturing; mc-Si solar cells; solar cell; surface density; triangular pyramid structure; untextured cell; Morphology; Photovoltaic cells; Reflectivity; Sulfur hexafluoride; Surface morphology; Surface treatment; Surface waves;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
