Title :
13.5-inch quarter-HD flexible AMOLED with crystalline oxide FET
Author :
Shinoda, Hiroto ; Komatsu, Ryu ; Kataniwa, Masatoshi ; Aoyama, Tomoya ; Hatano, Kaoru ; Chida, Akihiro ; Kawashima, Susumu ; Hirakata, Yoshiharu ; Yamazaki, Shunpei ; Yamamoto, Kayo ; Obana, Saki
Author_Institution :
Semicond. Energy Lab. Co., Ltd., Atsugi, Japan
Abstract :
We report a 13.5-inch bottom-emission flexible AMOLED using oxide FETs. A transfer technology in which oxide FETs having a structure we call CAAC featuring low off-state current and high reliability are formed on a glass substrate, and then, the FET array is separated from the glass substrate and attached to a plastic substrate was employed, thereby realizing a flexible OS-FET AM-OLED.
Keywords :
II-VI semiconductors; MOSFET; gallium compounds; indium compounds; organic light emitting diodes; semiconductor device reliability; wide band gap semiconductors; 13.5-inch quarter-HD flexible AMOLED; CAAC; InGaZnO; crystalline oxide FET; glass substrate; low off-state current; plastic substrate; reliability; size 13.5 inch; transfer technology; Active matrix organic light emitting diodes; FETs; Fabrication; Films; Glass; Substrates;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
