Title :
Silicon TFTs and circuits on glass and on plastics
Author :
Mohammed-Brahim, T. ; Janfaoui, S. ; Kandoussi, K. ; Simon, C. ; Coulon, N.
Author_Institution :
IETR, D.M.M., Univ. de Rennes I, Rennes, France
Abstract :
Silicon technology leading to reliable CMOS electronics on any substrate supporting a maximum temperature of 180°C is presented. The technology is based on as-deposited microcrystalline silicon deposited in standard PECVD reactor using usual silane and hydrogen gases and adding only argon to improve the crystalline fraction. Very high uniformity on the size of our substrate (5cm×5cm) is demonstrated. Reproducibility is obtained even if the flows of the gases are slightly varied. New silicon technology producing circuits that are able to go with any physical function is then demonstrated.
Keywords :
elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; thin film transistors; CMOS electronics; PECVD reactor; Si; SiO2; circuits; crystalline fraction; gas flows; glass; hydrogen gas; maximum temperature; microcrystalline silicon; physical function; plastics; reproducibility; silane gas; silicon TFT; silicon technology; substrate size; Argon; CMOS integrated circuits; Films; Insulators; Logic gates; Silicon; Thin film transistors;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
