DocumentCode :
568028
Title :
Fabrication of zinc oxide nano-patterns by quick gel-nanoimprint process toward optical switching devices
Author :
Araki, Shinji ; Zhang, Min ; Doe, Takahiro ; Lu, Li ; Horita, Masahiro ; Nishida, Takashi ; Ishikawa, Yasuaki ; Uraoka, Yukiharu
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol. (NAIST), Ikoma, Japan
fYear :
2012
fDate :
4-6 July 2012
Firstpage :
29
Lastpage :
32
Abstract :
We investigated a quick patterning using a gel-nanoimprint process for zinc oxide (ZnO) thin films. The X-ray diffraction measurement revealed that the ZnO thin films had wurtzite structure by annealing in the ambient air or oxygen. The ZnO thin film annealed in oxygen exhibited higher refractive index of 1.92 (at 720 nm for wavelength of light) which is close to that of a conventional ZnO thin film, whereas that of ZnO thin film annealed in air atmosphere provided very low value of 1.64. We demonstrated the nano-patterning with quite short imprinting time in 5 min by the gel-nanoimprint process. We achieved that the shrinkage factor of ZnO nano-patterns was as low as 8% and 3% in the width-and height-directions, respectively.
Keywords :
II-VI semiconductors; X-ray diffraction; annealing; nanofabrication; nanopatterning; refractive index; semiconductor growth; wide band gap semiconductors; zinc compounds; X-ray diffraction measurement; XRD; ZnO; annealing; height-direction; imprinting time; nanopatterning; optical switching devices; quick gel-nanoimprint process; quick patterning; refractive index; shrinkage factor; time 5 min; wavelength 720 nm; width-direction; wurtzite structure; zinc oxide nanopattern fabrication; zinc oxide thin films; Annealing; Films; Heating; Refractive index; Solvents; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-0399-6
Type :
conf
Filename :
6294920
Link To Document :
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