Title :
Electron trapping in Al2O3/HfO2 nanolaminate-based MOS capacitors
Author :
Salomone, L. Sambuco ; Campabadal, F. ; Fernández, M.I. ; Lipovetzky, J. ; Carbonetto, S.H. ; Inza, M. A García ; Redin, E.G. ; Faigón, A.
Author_Institution :
Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina
Abstract :
We studied the trapping/detrapping processes in MOS capacitors with an Atomic Layer Deposited (ALD) Al2O3/HfO2/Al2O3/HfO2/Al2O3 stack as insulating layer for both types of substrates, regarding its use as a component of Charge-Trapping nonvolatile memory (CT-NVM). Relevant information about trapping/detrapping processes was obtained through constant capacitance voltage transient (CCVT) technique.
Keywords :
MOS capacitors; aluminium compounds; atomic layer deposition; electron traps; flash memories; hafnium compounds; ALD stack; Al2O3-HfO2-Al2O3-HfO2-Al2O3; CCVT technique; CT-NVM; atomic layer deposited stack; charge-trapping nonvolatile memory; constant capacitance voltage transient technique; electron trapping; nanolaminate-based MOS capacitors; trapping-detrapping processes; Aluminum oxide; Capacitance-voltage characteristics; Capacitors; Electron traps; Hafnium compounds; Hysteresis; Al2O3; Charge trap (CT) memory; Electron traps; HfO2; High-k gate dielectrics; MOS devices; Trap characterization;
Conference_Titel :
Micro-Nanoelectronics, Technology and Applications (EAMTA), 2012 Argentine School of
Conference_Location :
Cordoba
Print_ISBN :
978-1-4673-2696-4
