Electron trapping in Al2O3/HfO2 nanolaminate-based MOS capacitors

Author

Salomone, L. Sambuco ; Campabadal, F. ; Fernández, M.I. ; Lipovetzky, J. ; Carbonetto, S.H. ; Inza, M. A García ; Redin, E.G. ; Faigón, A.

Author_Institution

Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina

fYear

2012

fDate

9-10 Aug. 2012

Firstpage

90

Lastpage

95

Abstract

We studied the trapping/detrapping processes in MOS capacitors with an Atomic Layer Deposited (ALD) Al₂O₃/HfO₂/Al₂O₃/HfO₂/Al₂O₃ stack as insulating layer for both types of substrates, regarding its use as a component of Charge-Trapping nonvolatile memory (CT-NVM). Relevant information about trapping/detrapping processes was obtained through constant capacitance voltage transient (CCVT) technique.

Keywords

MOS capacitors; aluminium compounds; atomic layer deposition; electron traps; flash memories; hafnium compounds; ALD stack; Al₂O₃-HfO₂-Al₂O₃-HfO₂-Al₂O₃; CCVT technique; CT-NVM; atomic layer deposited stack; charge-trapping nonvolatile memory; constant capacitance voltage transient technique; electron trapping; nanolaminate-based MOS capacitors; trapping-detrapping processes; Aluminum oxide; Capacitance-voltage characteristics; Capacitors; Electron traps; Hafnium compounds; Hysteresis; Al2O3; Charge trap (CT) memory; Electron traps; HfO2; High-k gate dielectrics; MOS devices; Trap characterization;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro-Nanoelectronics, Technology and Applications (EAMTA), 2012 Argentine School of

Conference_Location

Cordoba

Print_ISBN

978-1-4673-2696-4

Type

conf

Filename

6297324