DocumentCode :
56889
Title :
Analysis of Nano-Structured 
Thin Film 
Sensor b
Author :
Mariappan, Chinnasamy Ramaraj ; Prabhu, E. ; Gnanasekar, Kovilpillai Immanuel ; Jayaraman, Vijaysekhar ; Gnanasekaran, T.
Author_Institution :
Chem. Group, Indira Gandhi Centre for Atomic Res., Kalpakkam, India
Volume :
14
Issue :
3
fYear :
2014
fDate :
Mar-14
Firstpage :
651
Lastpage :
656
Abstract :
Nano-structured In2O3 thin film was made using a pulsed laser deposition technique. The surface topography and structural properties of the thin film were characterized by atomic force microscopy and X-ray diffraction, respectively. Complex impedance spectroscopy of In2O3 thin film gas sensor was investigated from 275 °C to 425 °C when exposed into clean air and air containing a trace level of NOx. Significant NOx sensing characteristics of thin film were observed at 325 °C by ac impedance spectroscopic analysis. The resistance and capacitance of indium oxide film increased when exposed into the trace level of NOx. A mechanism for this increase of resistance and capacitance is proposed.
Keywords :
X-ray diffraction; atomic force microscopy; gas sensors; indium compounds; nanosensors; nanostructured materials; nitrogen compounds; surface topography; thin film sensors; AC impedance spectroscopic analysis; In2O3-NOx; X-ray diffraction; atomic force microscopy; nanostructured thin film gas sensor; pulsed laser deposition technique; structural property; surface topography; temperature 275 degC to 425 degC; Capacitance; Films; Gas detectors; Impedance; Resistance; Space charge; ${rm In}_{2}{rm O}_{3}$
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2013.2286198
Filename :
6636050
Link To Document :
