Title :
Potential barrier at the ferroelectric grain boundary due to asymmetric screening of depolarization fields
Author :
Genenko, Y.A. ; Hirsch, O. ; Erhart, P.
Author_Institution :
Inst. fur Materialwissenschaft, Tech. Univ. Darmstadt, Darmstadt, Germany
Abstract :
Electric depolarization fields generated by a stripe domain structure in ferroelectrics are considered within a semiconductor model. Field screening due to electronic band bending and due to presence of intrinsic defects leads to the building of asymmetric space charge regions near the grain boundary. This in turn results in the formation of a potential barrier between the grain surface and its interior.
Keywords :
barium compounds; dielectric polarisation; electric domains; ferroelectric ceramics; ferroelectric materials; grain boundaries; space charge; BaTiO3; asymmetric screening; asymmetric space charge; electric depolarization fields; electronic band bending; ferroelectric grain boundary; field screening; grain surface; intrinsic defects; potential barrier; semiconductor model; stripe domain structure; Dielectrics; Electric fields; Electric potential; Finite element methods; Grain boundaries; Space charge; band bending; defects; depolarization field; ferroelectric grain; potential barrier at the grain boundary; semiconductor model; space charge;
Conference_Titel :
Applications of Ferroelectrics held jointly with 2012 European Conference on the Applications of Polar Dielectrics and 2012 International Symp Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials (ISAF/ECAPD/PFM), 2012 Intl Symp
Conference_Location :
Aveiro
Print_ISBN :
978-1-4673-2668-1
DOI :
10.1109/ISAF.2012.6297727
