DocumentCode :
56896
Title :
Corrections to “Efficient High-Power Laser Diodes” [Jul/Aug 13 1501211]
Author :
Crump, P. ; Erbert, Gotz ; Wenzel, Hans ; Frevert, C. ; Schultz, C.M. ; Hasler, K.-H. ; Staske, Ralf ; Sumpf, Bernd ; Maabdorf, Andre ; Bugge, F. ; Knigge, S. ; Trankle, Gunther
Author_Institution :
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin , Germany
Volume :
20
Issue :
1
fYear :
2014
fDate :
Jan.-Feb. 2014
Firstpage :
139
Lastpage :
139
Abstract :
There are errors in Section V-C of the above-title paper [ibid., vol. 19, no. 4, article no. 1501211, Jul./Aug. 2013]. The corrected text is given, as well as a correction for Fig. 9.
Keywords :
Gallium arsenide; III-V semiconductors; Power conversion; Quantum well lasers; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2013.2289943
Filename :
6709821
Link To Document :
بازگشت