$RC$ Model for Frequency Dependence of Split $C\hbox {--}V$ Measurements on Bare SOI Wafers

The feasibility of split $C\hbox {--}V$ measurements for direct evaluation of carrier mobility in as-fabricated silicon-on-insulator wafers has been demonstrated. Here, we complete this letter by modeling the frequency dependence of capacitance curves. The peculiarity of the pseudo-MOSFET ( $\Psi$ -MOSFET) configuration with respect to standard MOSFET comes from the possible distribution of mobile carriers beyond the source and drain contacts. This implies a variation in charge spreading and capacitance with frequency that we address with an $RC$ low-pass filter model. Experimental $C\hbox {--}V$ measurements with one and two probes were used for validation of the proposed model.