On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

Author

Jin Cai ; Ning, Tak H. ; D´Emic, Christopher P. ; Jeng-Bang Yau ; Chan, Kevin K. ; Joonah Yoon ; Muralidhar, R. ; Dae-Gyu Park

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

2

Issue

5

fYear

2014

fDate

Sept. 2014

Firstpage

105

Lastpage

113

Abstract

The SOI symmetric lateral bipolar transistor is uniquely suitable for operation at high injection currents where the injected minority carrier density in the base region is larger than the base doping concentration. Transistors operating in high-injection can achieve record-high drive currents on the order of 3-5 mA/μm. The commonly used Shockley diode and bipolar current equations are modified to be applicable for all injection levels. Excellent agreement is shown between measured and modeled currents for data at V_BC = 0. A novel partially depleted-base design can further increase the drive current and the current gain, especially at low V_BE.

Keywords

bipolar transistors; carrier density; semiconductor doping; silicon-on-insulator; SOI symmetric lateral bipolar transistor; Shockley diode; base doping concentration; base region; bipolar current equations; current gain; device design; drive-current capability; injection currents; minority carrier density; partially depleted-base design; Bipolar transistors; Doping; Equations; Implants; Integrated circuits; Niobium; Transistors; Bipolar junction transistor; high-level injection; silicon-on-insulator; symmetric junction;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2014.2331053

Filename

6837451