Analytical Threshold Voltage Model of Junctionless Double-Gate MOSFETs With Localized Charges

Author

Jong-Ho Woo ; Ji-Min Choi ; Yang-Kyu Choi

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

60

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

2951

Lastpage

2955

Abstract

An analytical threshold voltage model for a junctionless double-gate MOSFET with localized charges is developed. The model is derived based on 2-D Poisson´s equation with parabolic potential approximation. The proposed model is verified by device simulation results. Threshold voltage dependencies on various device parameters are also analyzed. The proposed model can be used to estimate the threshold voltage degradation as caused by hot carrier effects and to provide a guideline for the optimization of junctionless transistors.

Keywords

MOSFET; Poisson equation; approximation theory; hot carriers; optimisation; semiconductor device models; 2D Poisson´s equation; analytical threshold voltage model; device parameters; device simulation; hot carrier effects; junctionless double-gate MOSFET; junctionless transistors; localized charges; optimization; parabolic potential approximation; threshold voltage degradation; threshold voltage dependency; Analytical models; Electric potential; Equations; MOSFET; Mathematical model; Semiconductor device modeling; Threshold voltage; 2-D Poisson´s equation; hotcarrier effects (HCEs); junctionless double-gate (JLDG) MOSFETs; localized charge; threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2273223

Filename

6567918