Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method

A 1.55- $\mu{\rm m}$ InGaAsP-Si hybrid laser operating at 10 $^{\circ}{\rm C}$ under continuous-wave operation is fabricated using a selective-area metal-bonding method with AuGeNi/Au on InGaAsP gain structure as both cathode and bonding metal and AuSn on silicon-on-insulator (SOI) as bonding metal. The maximum single-facet output power is 9 mW. The slope efficiency of the hybrid laser is 0.04 W/A, four times that of the laser before bonding. A semi-insulating InP:Fe buried heterostructure laser is flip-chip bonded onto an SOI waveguide. The light generated in the active area is evanescently coupled into the silicon waveguide. The simplicity and flexibility of the fabrication process and high yield make the hybrid laser a promising light source.