DocumentCode :
57091
Title :
Reducing Transistor Variability for High Performance Low Power Chips
Author :
Rogenmoser, R. ; Clark, Lawrence T.
Volume :
33
Issue :
2
fYear :
2013
fDate :
March-April 2013
Firstpage :
18
Lastpage :
26
Abstract :
CMOS integrated-circuit supply-voltage reduction has plateaued in recent years as increased transistor variability has limited transistor-threshold voltage scaling. The deeply depleted channel transistor, implemented on bulk CMOS, provides a low-cost option to re-enable voltage scaling on both future and legacy CMOS fabrication processes by reducing random variability and providing a strong body factor to pull in systematic variation and compensate for environmental effects resulting in 50 percent lower power at matched performance.
Keywords :
CMOS integrated circuits; MOSFET; compensation; power aware computing; power supplies to apparatus; CMOS fabrication processes; CMOS integrated-circuit supply-voltage reduction; body factor; depleted channel transistor; environmental effects; higher-performance lower-power chips; random variability reduction; systematic variation; transistor variability reduction; transistor-threshold voltage scaling; voltage scaling; CMOS integrated circuits; Random access memory; Threshold voltage; Transistors; Voltage control; CMOS; DDC; VLSI; body bias; deeply depleted channel transistor; low power; undoped channel transistor; voltage scaling;
fLanguage :
English
Journal_Title :
Micro, IEEE
Publisher :
ieee
ISSN :
0272-1732
Type :
jour
DOI :
10.1109/MM.2013.10
Filename :
6461870
Link To Document :
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