Title :
A 2.4 Gbps transmitter with programmable de-emphasis scheme for DDR3 memory interface
Author :
Lim, Z.Z. ; Mustaffa, M.T. ; Navaratnam, N.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. Sains Malaysia, Nibong Tebal, Malaysia
Abstract :
A 2.4 Gbps output driver for DDR3 memory interface with programmable de-emphasis scheme is proposed. There are 15 de-emphasis levels that can be programmed to eliminate inter-symbol interference (ISI) problem at high operating speed. The proposed output driver is implemented using low-voltage 45 nm CMOS process. Due to the DDR3 memory operating voltage is 1.5 V, transistor stacking technique is applied in the output driver design to avoid transistor gateoxide reliability issues. The driver´s transmit impedance can be programmed between 20 Ω to 40 Ω and receive impedance of 100 Ω. The output slew rate is controlled at 4-6 V/ns. There are two compensation blocks to calibrate the output impedance and output slew rate across process, voltage, and temperature (PVT) variations.
Keywords :
CMOS memory circuits; DRAM chips; integrated circuit reliability; interference suppression; intersymbol interference; radio transmitters; DDR3 memory interface; ISI elimination; bit rate 2.4 Gbit/s; compensation blocks; driver transmit impedance; intersymbol interference elimination; low-voltage CMOS process; output driver; process-voltage-temperature variations; programmable de-emphasis scheme; resistance 100 ohm; size 45 nm; slew rate; transistor gateoxide reliability issue; transistor stacking technique; transmitter; voltage 1.5 V; Impedance; Jitter; Legged locomotion; Logic gates; Resistance; Transistors; Transmitters;
Conference_Titel :
Intelligent and Advanced Systems (ICIAS), 2012 4th International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4577-1968-4
DOI :
10.1109/ICIAS.2012.6306106