Die-level leakage current path analysis based on IR-OBIRCH technology

The leakage current localization is always challenging our Failure Analysis (FA). In the FA cases, the various defects and failures are able to induce a leakage current in die region. Because of the increasing integration and complexity, thick metal layers covering and so on, traditional FA technology such as light emission microscopy (EMMI)[1] and microprobe are limited to localize the current path or defect. As a good complementary, Infra Red Optical Beam Induced Resistance Change (IR-OBIRCH) plays an important role in current analysis [2][3][4]. However, even with IR-OBIRCH, the spot is not easy to be detected. So it is necessary to discuss how to use IR-OBIRCH in a complex condition. In this paper, some special FA cases about leakage current FA are introduced. Meanwhile, the advanced application based on functional IR-OBIRCH is also presented.