• DocumentCode
    571840
  • Title

    C-AFM analysis of advanced IC on SRAM high resistance failure

  • Author

    Leong, Wai Tuck ; Zhang, Hong Bo ; Hoe, Wilson Lee Cheng ; De Lin, Ren

  • Author_Institution
    United Microelectron. Corp., Ltd., Singapore, Singapore
  • fYear
    2012
  • fDate
    2-6 July 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper demonstrates the utilization of the C-AFM to study and identify the electrical characteristic of SRAM high resistance failure in CMOS process. After taking electrical measurement, cross-section TEM together with CD measurement to reveal and understand the physical root cause of the electrical failure is reported.
  • Keywords
    CMOS memory circuits; electrical faults; failure analysis; network analysis; random-access storage; C-AFM analysis; CD measurement; CMOS process; SRAM high resistance failure; advanced IC; cross-section TEM; electrical characteristics; electrical failure; electrical measurement; physical root cause; Contacts; Electrical resistance measurement; Failure analysis; Integrated circuits; Random access memory; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4673-0980-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2012.6306248
  • Filename
    6306248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=571840