DocumentCode :
571840
Title :
C-AFM analysis of advanced IC on SRAM high resistance failure
Author :
Leong, Wai Tuck ; Zhang, Hong Bo ; Hoe, Wilson Lee Cheng ; De Lin, Ren
Author_Institution :
United Microelectron. Corp., Ltd., Singapore, Singapore
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
1
Lastpage :
3
Abstract :
This paper demonstrates the utilization of the C-AFM to study and identify the electrical characteristic of SRAM high resistance failure in CMOS process. After taking electrical measurement, cross-section TEM together with CD measurement to reveal and understand the physical root cause of the electrical failure is reported.
Keywords :
CMOS memory circuits; electrical faults; failure analysis; network analysis; random-access storage; C-AFM analysis; CD measurement; CMOS process; SRAM high resistance failure; advanced IC; cross-section TEM; electrical characteristics; electrical failure; electrical measurement; physical root cause; Contacts; Electrical resistance measurement; Failure analysis; Integrated circuits; Random access memory; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
ISSN :
1946-1542
Print_ISBN :
978-1-4673-0980-6
Type :
conf
DOI :
10.1109/IPFA.2012.6306248
Filename :
6306248
Link To Document :
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