DocumentCode
571848
Title
The link between NBTI and TDDB of high-k gate P-MOSFETs
Author
Gao, Y. ; Ang, D.S.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
4
Abstract
The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifetime. This evidence implies switching hole traps as a common link between NBTI and TDDB.
Keywords
MOSFET; elemental semiconductors; hafnium; high-k dielectric thin films; hole traps; semiconductor device breakdown; Hf; NBTI recovery; NBTI stressing condition; TDDB lifetime; high-k gate p-MOSFET; negative-bias temperature instability; permanent trapped hole; switching hole trap conversion; time-dependent dielectric breakdown; Hafnium compounds; High K dielectric materials; Logic gates; Low-frequency noise; MOSFET circuits; Stress; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306262
Filename
6306262
Link To Document