Title :
The link between NBTI and TDDB of high-k gate P-MOSFETs
Author :
Gao, Y. ; Ang, D.S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The relationship between NBTI and TDDB of Hf-based high-k p-MOSFETs is examined. At certain NBTI stressing conditions, the conversion of switching hole traps into permanent trapped holes will occur to reduce the NBTI recovery. The conversion is shown to correspond to a degradation of the TDDB lifetime. This evidence implies switching hole traps as a common link between NBTI and TDDB.
Keywords :
MOSFET; elemental semiconductors; hafnium; high-k dielectric thin films; hole traps; semiconductor device breakdown; Hf; NBTI recovery; NBTI stressing condition; TDDB lifetime; high-k gate p-MOSFET; negative-bias temperature instability; permanent trapped hole; switching hole trap conversion; time-dependent dielectric breakdown; Hafnium compounds; High K dielectric materials; Logic gates; Low-frequency noise; MOSFET circuits; Stress; Temperature measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306262
