DocumentCode
571856
Title
Thermal analysis of AlGaN/GaN High-Electron-Mobility Transistors by Infrared Microscopy
Author
Zhao, Miao ; Liu, Xinyu ; Yingkui, Zheng ; Wei, Ke ; Mingzeng, Peng ; Yankui, Li ; Guoguo, Liu
Author_Institution
Inst. of Microelectron., Beijing, China
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
4
Abstract
The channel temperature of AlGaN/GaN High-Electron-Mobility Transistor was measured by Infrared Microscopy. The behaviors of the channel temperature distribution, the peak channel temperature and the thermal resistance under DC bias were investigated. IR Microscopy facilitates the study of how the device parameters affect reliability.
Keywords
aluminium compounds; high electron mobility transistors; semiconductor device reliability; thermal analysis; AlGaN-GaN; DC bias; IR microscopy; channel temperature distribution; device parameters; high-electron-mobility transistors; infrared microscopy; peak channel temperature; reliability; thermal analysis; thermal resistance; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Temperature dependence; Temperature measurement; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306275
Filename
6306275
Link To Document