Title :
Thermal analysis of AlGaN/GaN High-Electron-Mobility Transistors by Infrared Microscopy
Author :
Zhao, Miao ; Liu, Xinyu ; Yingkui, Zheng ; Wei, Ke ; Mingzeng, Peng ; Yankui, Li ; Guoguo, Liu
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
The channel temperature of AlGaN/GaN High-Electron-Mobility Transistor was measured by Infrared Microscopy. The behaviors of the channel temperature distribution, the peak channel temperature and the thermal resistance under DC bias were investigated. IR Microscopy facilitates the study of how the device parameters affect reliability.
Keywords :
aluminium compounds; high electron mobility transistors; semiconductor device reliability; thermal analysis; AlGaN-GaN; DC bias; IR microscopy; channel temperature distribution; device parameters; high-electron-mobility transistors; infrared microscopy; peak channel temperature; reliability; thermal analysis; thermal resistance; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Temperature dependence; Temperature measurement; Thermal resistance;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306275
