Title :
TEM dark-field off-axis electron holography strain measurement on embedded-SiGe pMOSFETs and comparison with nano-beam diffraction strain measurement
Author :
Zhu, J. ; Zhou, Y.K. ; Toh, S.L. ; Mai, Z.H. ; Lam, J. ; Du, A.Y. ; Hua, Y.N. ; Rajgopal, R.
Author_Institution :
QRA, GLOBALFOUNDRIES Singapore, Singapore, Singapore
Abstract :
TEM dark-field off-axis electron holography technique was applied to study strain profile in bulk Si pMOSFETs with epitaxial SiGe selectively grown in source/drain are. Based on lattice displacement-induced electron wave phase shift, 2-D strain mapping (ε[110] and ε[001]) were retrieved. Strain variation due to sample thinning was evaluated. Results from dark-field holography technique was discussed and compared with TEM nano-beam diffraction strain measurement.
Keywords :
MOSFET; epitaxial growth; holography; strain measurement; 2D strain mapping; MOSFET; SiGe; TEM dark field off axis electron holography strain measurement; TEM nanobeam diffraction strain measurement; epitaxial growth; lattice displacement induced electron wave phase shift; strain profile; strain variation; Diffraction; Holography; Image reconstruction; MOSFETs; Silicon; Strain; Strain measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-0980-6
DOI :
10.1109/IPFA.2012.6306290
