DocumentCode
571866
Title
Failure analysis on ultra-low k film de-lamination by TOF-SIMS composition analysis
Author
Teo, Han Wei ; Chen, Shuting ; Zhu, Lei ; Hua, Younan ; Yuan, Zhao Xin ; Heng, Yong Seng ; Li, Chao Yong
Author_Institution
Globalfoundries Singapore Pte. Ltd., Singapore, Singapore
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
3
Abstract
A failure case study and root cause of ultra low-k film delamination was reported. TOF-SIMS composition analysis found higher concentration of carbon at the transition oxide. The clogging of the foreline flow path was identified in the process to cause the transient carbon surge, resulting in higher carbon concentration in the transition oxide and poor adhesion of the ultra low-k film.
Keywords
chemical mechanical polishing; delamination; failure analysis; integrated circuit reliability; low-k dielectric thin films; TOF-SIMS composition analysis; carbon concentration; clogging; failure analysis; foreline flow path; poor adhesion; transient carbon surge; transition oxide; ultra low-k film; ultra-low k film delamination; Adhesives; Carbon; Delamination; Films; Reliability; Silicon; Valves;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306292
Filename
6306292
Link To Document