DocumentCode
571869
Title
A novel internal field enhanced retention degradation model for localized charge trapping memory device
Author
Yu, Xiao ; Pan, Liyang ; Qiao, Fengying ; Shi, Guangjian ; Xu, Jun
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
4
Abstract
A novel internal electric field enhanced retention model for localized charge trapping memory devices is proposed to explain the reliability degradation. According to the model, the excitation energy level distribution profiles of trapped holes after different P/E cycling stress are demonstrated for the first time.
Keywords
electric fields; hole traps; reliability; semiconductor storage; P/E cycling stress; excitation energy level distribution; internal electric field enhanced retention degradation; localized charge trapping memory device; reliability degradation; trapped hole; Degradation; Electric fields; Electron traps; Energy states; Mathematical model; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306295
Filename
6306295
Link To Document