DocumentCode :
571871
Title :
Laser voltage probing in failure analysis of advanced integrated circuits on SOI
Author :
Ravikumar, V.K. ; Wampler, R. ; Ho, M.Y. ; Christensen, J. ; Phoa, S.L.
Author_Institution :
Adv. Micro Devices Singapore Pte Ltd., Singapore, Singapore
fYear :
2012
fDate :
2-6 July 2012
Firstpage :
1
Lastpage :
4
Abstract :
Laser voltage probing is the newest generation of tools that perform timing analysis for electrical fault isolation in advanced failure analysis facilities. This paper uses failure analysis case studies on SOI to showcase the implementation of laser voltage probing in the failure analysis flow and highlight its significance in root-cause identification.
Keywords :
failure analysis; fault location; silicon-on-insulator; SOI; advanced failure analysis facility; advanced integrated circuit; electrical fault isolation; laser voltage probing; root cause identification; timing analysis; Absorption; Clocks; Failure analysis; Frequency modulation; Lasers; MOS devices; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location :
Singapore
ISSN :
1946-1542
Print_ISBN :
978-1-4673-0980-6
Type :
conf
DOI :
10.1109/IPFA.2012.6306297
Filename :
6306297
Link To Document :
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