DocumentCode
571876
Title
Correlation of very fast transmission line pulse (VFTLP) and Field-Induced Charged Device Model (CDM) Testing
Author
Xue, Yang
Author_Institution
Singapore Inst. of Manuf. Technol., Singapore, Singapore
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
3
Abstract
The correlation between the second break down current of VFTLP Testing and the passing voltage of Field-Induced CDM Testing has been derived. The derivation is based on the power to failure relation and RLC model of CDM test. The derived correlation has been also demonstrated in experiment.
Keywords
semiconductor device breakdown; semiconductor device models; semiconductor device reliability; semiconductor device testing; RLC model; VFTLP testing; field-induced CDM testing; field-induced charged device model; passing voltage; power-to-failure relation; second breakdown current; very fast transmission line pulse; Calibration; Capacitors; Correlation; Electrostatic discharges; Hidden Markov models; Light emitting diodes; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306309
Filename
6306309
Link To Document