DocumentCode
571881
Title
Application of Seebeck Effect Imaging on failure analysis of via defect
Author
Nordin, Nuzrul Fahmi
Author_Institution
Infineon Technol. (Kulim) Sdn. Bhd., Kulim, Malaysia
fYear
2012
fDate
2-6 July 2012
Firstpage
1
Lastpage
4
Abstract
Often localizations for defective interconnects are done during or after some destructive analysis or sample preparation i.e., TIVA, PVC or active probing. As a result, the defect observed could be secondary effect induced during analysis. Therefore, Seebeck Effect Imaging (SEI) technique has been developed to avoid such uncertainty. This technique applies the theory of Seebeck effect and adapted into a Scanning Optical Microscope (SOM) system.
Keywords
Seebeck effect; failure analysis; integrated circuit interconnections; integrated circuit testing; SOM system; defective interconnect localization; destructive analysis; failure analysis; sample preparation; scanning optical microscope system; seebeck effect imaging; via defect; Integrated circuit interconnections; Microscopy; Surface emitting lasers; Temperature sensors; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4673-0980-6
Type
conf
DOI
10.1109/IPFA.2012.6306316
Filename
6306316
Link To Document