Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS

Author

Wang, B. ; Tanaka, S. ; Guo, B. ; Vereecke, G. ; Severi, S. ; Witvrouw, A. ; Wevers, M. ; De Wolf, I.

Author_Institution

Imec, Leuven, Belgium

fYear

2012

fDate

2-6 July 2012

Firstpage

1

Lastpage

1

Abstract

MEMs typically have moving parts that are sensitive to the environmental pressure during operation. Many types of microsystem devices need vacuum in order to operate properly. However, making a high vacuum MEMS package, which maintains this vacuum over a long time, is difficult. Sources of gas inside a MEMS package are mainly due to external leakage or in-diffusion and/or internal materials outgassing. This paper reports on a systematical study of the outgassing properties of typical materials (Table 1) used for imec´s polycrystalline silicon-germanium (poly-SiGe) based MEMS thin film vacuum package technology.

Keywords

Ge-Si alloys; micromechanical devices; outgassing; semiconductor device packaging; thin films; environmental pressure; external leakage; germanium; high vacuum MEMS package; microsystem device; outgassing study; poly-SiGe; polycrystalline silicon; thin film vacuum package technology; vacuum packaging; Annealing; Cleaning; Films; Micromechanical devices; Packaging; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2012 19th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4673-0980-6

Type

conf

DOI

10.1109/IPFA.2012.6306325

Filename

6306325