The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

The high-intensity pulsed ion beam with parameters: ion energy 350–500 keV, ion current density at a target > 200 A/cm², pulse duration 60 ns) was used for the metallic deposition. Film deposition rate was 0.6–4.0 mm1s. Transmission electron microscopy/ transmission electron diffraction investigations of the copper target-film system have been performed. Impurity content in the film have been determined using X-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma have been measured.