• DocumentCode
    572757
  • Title

    High-power semiconductor RSD-based switch

  • Author

    Bezuglov, V.G. ; Galakhov, I.V. ; Grusin, I.A. ; Zolotovsky, V.I. ; Gudov, S.N. ; Logutenko, S.L. ; Murugov, V.M. ; Osin, V.A. ; Petrakov, V.N. ; Grekhov, I.V. ; Korotkov, Sergey V. ; Kovtun, V.I. ; Martynenko, V.A. ; Chumakov, G.D.

  • Author_Institution
    RFNC - VNIIEF, Sarov (Arzamas - 16), Russia
  • Volume
    2
  • fYear
    1996
  • fDate
    10-14 June 1996
  • Firstpage
    981
  • Lastpage
    984
  • Abstract
    We describe the operating principle and test results for the high-power semiconductor RSD-based switch with the following operating parameters: • operating voltage − 25kV, • peak operating current − 200kA, • maximum transferred charge − 70C. The switch is intended for use by high-power capacitor banks in state-of-the-art research facilities. The switch is evaluated for its applicability in commercial pulsed systems. The possibility to increase the peak operating current to 500kA is shown.
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    High-Power Particle Beams, 1996 11th International Conference on
  • Conference_Location
    Prague, Czech Republic
  • Print_ISBN
    978-80-902250-3-9
  • Type

    conf

  • Filename
    6308503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=572757