DocumentCode :
572867
Title :
The fabrication and research Of 4H-Sic Schottky metal-semiconductor-metal ultraviolet photodetectors
Author :
Zhang, Junqin ; Yang, Yintang ; Jia, Hujun ; Chai, Changchun ; Zhu, Hongfeng
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & devices of Educ. Minist., Xidian Univ., Xi´´an, China
fYear :
2012
fDate :
24-26 Aug. 2012
Firstpage :
307
Lastpage :
309
Abstract :
The fabrication and characterization of 4H-SiC Schottky metal-semiconductor-metal(MSM) photodetectors are reported in this paper. The current-voltage(I-V), capacitance-voltage(C-V) and spectral response characterization of the photodetectors are measured at room temperature. The dark current is 1.24 × 10-8A at 4V bias, and the average capacitance is 82.66pF at 0-5V voltage range. The spectral response range is from 250nm to 350 nm wavelength, and the highest responsivity appears at the wavelength of 280 nm. The results indicate that the 4H-SiC photodetectors are visible-blind.
Keywords :
optical fabrication; photodetectors; silicon compounds; ultraviolet detectors; wide band gap semiconductors; C-V characterization; I-V characterization; MSM photodetectors; Schottky metal-semiconductor-metal ultraviolet photodetectors; SiC; capacitance-voltage characterization; current-voltage characterization; dark current; spectral response characterization; temperature 293 K to 298 K; voltage 0 V to 5 V; wavelength 250 nm to 350 nm; Epitaxial growth; Physics; Semiconductor diodes; Silicon; 4H-SiC; metal-semiconductor-metal (MSM); ultraviolet(UV) photodetector;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Science and Information Processing (CSIP), 2012 International Conference on
Conference_Location :
Xi´an, Shaanxi
Print_ISBN :
978-1-4673-1410-7
Type :
conf
DOI :
10.1109/CSIP.2012.6308855
Filename :
6308855
Link To Document :
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