Title :
Haswell: A Family of IA 22 nm Processors
Author :
Kurd, Nasser ; Chowdhury, Mashrur ; Burton, Edward ; Thomas, Thomas P. ; Mozak, Christopher ; Boswell, Brent ; Mosalikanti, Praveen ; Neidengard, Mark ; Deval, Anant ; Khanna, Ashish ; Chowdhury, Nasirul ; Rajwar, Ravi ; Wilson, Timothy M. ; Kumar, Ravind
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
We describe the 4th Generation Intel® Core™ processor family (codenamed “Haswell”) implemented on Intel® 22 nm technology and intended to support form factors from desktops to fan-less Ultrabooks™. Performance enhancements include a 102 GB/sec L4 eDRAM cache, hardware support for transactional synchronization, and new FMA instructions that double FP operations per clock. Power improvements include Fully-Integrated Voltage Regulators ( ~ 50% battery life extension), new low-power states (95% standby power savings), optimized MCP I/O system (1.0-1.22 pJ/b), and improved DDR I/O circuits (40% active and 100x idle power savings). Other improvements include full-platform optimization via integrated display I/O interfaces.
Keywords :
DRAM chips; cache storage; low-power electronics; synchronisation; 4th generation Intel core processor family; FMA instructions; Haswell; IA processors; L4 eDRAM cache; bit rate 102 Gbit/s; fan-less Ultrabooks; full-platform optimization; fully-integrated voltage regulators; improved DDR I/O circuits; integrated display I/O interfaces; low-power states; optimized MCP I/O system; performance enhancements; size 22 nm; transactional synchronization; Clocks; Graphics; Hardware; Instruction sets; Logic gates; Regulators; DDR; FIVR; FMA; IA; Intel ® TSX; eDRAM; on-packge I/O; power management; voltage regulator;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2014.2368126
