DocumentCode
573038
Title
A threshold detection circuit using 90nm CMOS technology for TR-UWB receivers
Author
Roy, Anirban ; Rashid, A.B.M.H.
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear
2011
fDate
12-12 Sept. 2011
Firstpage
53
Lastpage
57
Abstract
This paper presents a threshold detection circuit with an adjustable detection window designed in IBM 90nm CMOS technology. Together with a RF multiplier, it realizes the back-end section of a transmitted reference ultra wideband receiver, which is yet to be reported in literature. The comparator section uses an operational trans-conductance amplifier core and avoids the use of sample and hold and control voltage generator circuits which reduces the electronic overhead needed for the architecture. The design is tested at a bit rate of 0.1~2.0 Gbps and the decision circuit consumes 9.14 mW power from a 1.2 V bias supply with a maximum speed to power ratio of 218.8GHz/W. When compared against other reported comparators, the detection circuit shows improved performance in terms of speed and power dissipation.
Keywords
CMOS integrated circuits; detector circuits; radio receivers; radiofrequency integrated circuits; ultra wideband technology; IBM CMOS technology; RF multiplier; TR-UWB receivers; adjustable detection window; bit rate 0.1 Gbit/s to 2.0 Gbit/s; comparator section; control voltage generator circuits; operational transconductance amplifier core; power 9.14 mW; power dissipation; sample and hold circuits; size 90 nm; threshold detection circuit; transmitted reference ultrawideband receiver; voltage 1.2 V; CMOS; TR-UWB; operational trans-conductance amplifier; speed to power ratio; threshold detection; window comparator;
fLanguage
English
Publisher
iet
Conference_Titel
Active RF Devices, Circuits and Systems Seminar
Conference_Location
Belfast
Electronic_ISBN
978-1-84919-540-9
Type
conf
DOI
10.1049/ic.2011.0213
Filename
6309325
Link To Document